Semiconductor Device, The p-n junction
If an abrupt change in impurity type from acceptors (p-type) to donors (n-type) occurs within a single crystal structure, a p-n junction is formed (see Figure 3B and 3C). On the p side, the holes constitute the dominant carriers and so are called majority carriers. A few thermally generated electrons will also exist in the p side; these are termed minority carriers. On the n
posted by TiredKnife @ 4:35 AM
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